| PART |
Description |
Maker |
| NTD32N06-1 NTD32N06-1G NTD32N06T4G NTD32N06 NTD32N |
Power MOSFET 32 Amps, 60 Volts
32 Amps, 60 Volts, N−Channel DPAK
|
ONSEMI[ON Semiconductor]
|
| NTMD3P03R2-D NTMD3P03R2 NTMD3P03R2/D |
Power MOSFET -3.05 Amps-30 Volts
Power MOSFET -3.05 Amps, -30 Volts Dual P?Channel SO(-3.05 A, -30 V，双P通道,SO-8封装的功率MOSFET)
Power MOSFET -3.05 Amps, -30 Volts Dual P-Channel SO-8
|
ON Semiconductor
|
| NTMD2C02R2 |
Power MOSFET 2 Amps / 20 Volts
Power MOSFET 2 Amps, 20 Volts, Complimentary SO-8, Dual
|
ONSEMI[ON Semiconductor]
|
| NTP6N60-D NTP6N60/D |
Power MOSFET 6 Amps600 Volts
Power MOSFET 6 Amps, 600 Volts N-Channel TO-220 and D2PAK
|
ON Semiconductor
|
| MTD3055VL1 MTD3055VLT4 MTD3055VL MTD3055VL-D |
Power MOSFET 12 Amps, 60 Volts 12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET 12 Amps, 60 Volts N-Channel DPAK
|
ONSEMI[ON Semiconductor]
|
| NTD4302 NTD4302T4 NTD4302-1 |
Power MOSFET 68 Amps / 30 Volts(N-Channel DPAK)
Power MOSFET 68 Amps, 30 Volts(N−Channel DPAK)
Power MOSFET 68 Amps, 30 Volts(N-Channel DPAK)
|
ONSEMI[ON Semiconductor]
|
| NTMS5P02R206 NTMS5P02R2G NTMS5P02R2 |
Power MOSFET -5.4 Amps, -20 Volts 3950 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
ONSEMI[ON Semiconductor]
|
| MGB19N35CL MGP19N35CL |
Ignition IGBT 19 Amps, 350 Volts(19A50V钳位电压，点火绝缘栅双极型晶体管（D2PAK封装 点火IGBT一十九安培50伏特，（9A50V钳位电压，点火绝缘栅双极型晶体管（采用D2PAK封装））
Ignition IGBT 19 Amps, 350 Volts(19A350V钳位电压，点火绝缘栅双极型晶体管（TO-220封装 19 A, 380 V, N-CHANNEL IGBT, TO-220AB
Ignition IGBT 19 Amps, 350 Volts(19A锛?50V?充??靛?锛?????缂????????浣??锛?O-220灏??锛?
|
ON Semiconductor
|
| NTD15N06 NTD15N06T4 NTD15N06-1 NTD15N06-001 |
Power MOSFET 15 Amps, 60 Volts
Power MOSFET 15 Amps / 60 Volts
|
ONSEMI[ON Semiconductor]
|
| NTD20N06 NTD20N06G NTD20N06T4 NTD20N06T4G NTD20N06 |
Power MOSFET 20 Amps, 60 Volts
|
ONSEMI[ON Semiconductor]
|
